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한국물리학회 응용물리학분과 Applied Physics Division, The Korean Physical Society


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응용물리 (Applied Physics)

2024 가을 한국물리학회 응용물리학분과 우수발표상 수상자 명단

응용물리분과 세션
작성자 관리자등록일2024-10-28
첨부파일 -
응용물리분과 세션
세션수상자소속논문제목
D12.01오진영성균관대Magnetic structure of ErFeO3 ultrathin films
D12.02서지우숭실대Enhanced Optical properties in Sm3+/Sr2+ co-doped K0.52Na0.48NbO3
D12.03한재호숭실대Structural modification of Pr3+-/Zr4+- doped HfO2:Eu3+ and the resulting luminescence and dielectric properties
D12.04이재헌서강대Enhancement of Synaptic Behaviors in Dielectric-Ferroelectric Heterostructures for Neuromorphic Applications
D13.01Tao Ye성균관대Ultrafast hot carrier extraction and diffusion in MoS2/Au van der Waals electrode interface
D13.06양형렬연세대Spectroscopic evidence for surface reconstruction in the layered charge density wave material 1T-TaS2
D13.08김준수성균관대Sub-μm hot carrier diffusion in transition metal dichalcogenide
E12.05어정선고려대Tilt-engineered molecular-scale selector for enhanced learning in artificial neural networks
E13.04이석제서울대GaN remote epitaxy using a pristine graphene buffer layer on SiC via controlled graphitization
G12.01박하경이화여대Interplay between strain and charge: maximizing charge generation in highly-efficient flexible chalcopyrite photovoltaics
G12.05노현정연세대The analysis of hole injection enhancement mechanism of metal fluorides (BiF₃) co-deposited hole injection layer of OLEDs
G12.07여현우카이스트Finite-bias molecular dynamics simulations of water at the electrified graphene surface
G13.03최영주성균관대Direct Graphene Synthesis on Dielectric Transition Metal Oxides
G13.04제유경이화여대Mechanical resonance modes of graphene nano-electromechanical square drums with platinum nanopillar
J13.07임금하이화여대Improvement of charge transport via introducing controlled carrier-transport layers in Sb2Se3 solar cells
J13.08Cheng Xiong가천대Novel DNA-based Solid Polymer Electrolytes for High Performance Lithium-ion Batteries
J14.05오시원서강대Study of Low-Energy Magnons with Raman Spectroscopy in Atomically Thin NiPS3
J14.06이영진이화여대Spin-rotational excitations in hexagonal YMn(1-x)AlxO3
K13.02김한성세종대Accurate determination of the critical thickness in PtSe2 for metal–semiconductor transition



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